Channel TypeP

ConfigurationSingle

Dimensions1.68 x 0.86 x 0.8 mm

Drain Current-135 A

Drain to Source On Resistance8 Ω

Drain to Source Voltage-60 V

Forward Transconductance80 mS

Forward Voltage, Diode80 V

Gate to Source Voltage±20 V

Height0.031" (0.8mm)

Input Capacitance23 pF @ -25 V

Length0.066" (1.68mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip1

Number of Pins3

Operating and Storage Temperature-55 to +150 C

Package TypeSC-75A

PolarizationP-Channel

Power Dissipation250 mW

SeriesSI10 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge1.7 nC

Turn Off Delay Time35 ns

Turn On Delay Time20 ns

Typical Gate Charge @ Vgs1.7 nC @ -30 V

Voltage, Breakdown, Drain to Source-60 V

Width0.034" (0.86mm)