Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)150 V

Current - Continuous Drain (Id) @ 25°C4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs75mOhm @ 5A, 10V

Vgs(th) (Max) @ Id3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds625 pF @ 75 V

FET Feature-

Power Dissipation (Max)3.1W (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device Package8-SOP

Package / Case8-SOIC (0.154", 3.90mm Width)