销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 Arrow(艾睿) | PMDXB600UNE | NXP Semiconductors | FET - 阵列 TrenchFET® 分立半导体产品 | 5000+:¥1.37 10000+:¥1.28 25000+:¥1.21 50000+:¥1.1799 125000+:¥1.131+:¥3.25 10+:¥2.15 100+:¥1.56 1000+:¥1.47 5000+:¥1.4 10000+:¥1.29 25000+:¥1.25 50000+:¥1.23 100000+:¥1.191+:¥1.61 |
 Arrow(艾睿) | PMDXB600UNEZ | NXP Semiconductors | | 5000+:¥1.37 10000+:¥1.28 25000+:¥1.21 50000+:¥1.1799 125000+:¥1.131+:¥3.25 10+:¥2.15 100+:¥1.56 1000+:¥1.47 5000+:¥1.4 10000+:¥1.29 25000+:¥1.25 50000+:¥1.23 100000+:¥1.191+:¥1.61 |
 Digi-Key 得捷电子 | PMDXB600UNE | NXP Semiconductors | FET - 阵列 TrenchFET® 分立半导体产品 | 5000+:¥1.37 10000+:¥1.28 25000+:¥1.21 50000+:¥1.1799 125000+:¥1.13 |
 Digi-Key 得捷电子 | PMDXB600UNE | NXP Semiconductors | MOSFET 2N-CH 20V 0.6A 6DFN | 10,000 : $0.1755 5,000 : $0.1885
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 Digi-Key 得捷电子 | PMDXB600UNEL,147 | Nexperia USA Inc. | 0.6A, 20V, 2-ELEMENT, N CHANNEL, | $0.06000 |
 Digi-Key 得捷电子 | PMDXB600UNELZ | Nexperia USA Inc. | 20 V, DUAL N-CHANNEL TRENCH MOSF | $0.38000 |
 Digi-Key 得捷电子 | PMDXB600UNEZ | Nexperia USA Inc. | MOSFET 2N-CH 20V 0.6A 6DFN | $0.41000 |
 Digi-Key 得捷电子 | PMDXB600UNEZ | NXP Semiconductors | | 5000+:¥1.37 10000+:¥1.28 25000+:¥1.21 50000+:¥1.1799 125000+:¥1.13 |
 Mouser 贸泽电子 | PMDXB600UNE | NXP Semiconductors | | 5000+:¥1.37 10000+:¥1.28 25000+:¥1.21 50000+:¥1.1799 125000+:¥1.131+:¥3.25 10+:¥2.15 100+:¥1.56 1000+:¥1.47 5000+:¥1.4 10000+:¥1.29 25000+:¥1.25 50000+:¥1.23 100000+:¥1.19 |
 Mouser 贸泽电子 | PMDXB600UNELZ | Nexperia | MOSFET PMDXB600UNEL/DFN1010B-6/REEL 7 | 1:¥2.9154 10:¥2.2148 100:¥1.1978 1,000:¥0.89948 5,000:¥0.77631
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 Mouser 贸泽电子 | PMDXB600UNEZ | Nexperia | MOSFET 20 V, dual N-channel Trench MOSFET | 1:¥4.3844 10:¥3.616 100:¥2.2035 1,000:¥1.7063 5,000:¥1.4577
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 Mouser 贸泽电子 | PMDXB600UNEZ | NXP Semiconductors | | 5000+:¥1.37 10000+:¥1.28 25000+:¥1.21 50000+:¥1.1799 125000+:¥1.131+:¥3.25 10+:¥2.15 100+:¥1.56 1000+:¥1.47 5000+:¥1.4 10000+:¥1.29 25000+:¥1.25 50000+:¥1.23 100000+:¥1.19 |
 立创商城 | PMDXB600UNELZ | Nexperia(安世) | 连续漏极电流(Id)(25°C 时):600mA 漏源电压(Vdss):20V 栅源极阈值电压:950mV @ 250uA 漏源导通电阻:620mΩ @ 600mA,4.5V 最大功率耗散(Ta=25°C):380mW 类型:双N沟道 | 1+:¥1.35 10+:¥1.32 30+:¥1.29 100+:¥1.27
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 立创商城 | PMDXB600UNEZ | Nexperia(安世) | MOS(场效应管) | 1+:¥1.112709 200+:¥0.430604 500+:¥0.415471 1000+:¥0.407994
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