销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 Arrow(艾睿) | PMDT290UCE,115 | NXP Semiconductors | FET - 阵列 - 分立半导体产品 半导体 MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET | 4000+:¥0.8201 8000+:¥0.77 12000+:¥0.72 28000+:¥0.66 100000+:¥0.62 200000+:¥0.611+:¥2.44 10+:¥1.66 100+:¥0.95 1000+:¥0.78 4000+:¥0.74 8000+:¥0.74 24000+:¥0.68 48000+:¥0.66 100000+:¥0.634000+:¥0.55 12000+:¥0.551+:¥0.8399 |
 Digi-Key 得捷电子 | PMDT290UCE,115 | NXP Semiconductors | FET - 阵列 - 分立半导体产品 半导体 MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET | 4000+:¥0.8201 8000+:¥0.77 12000+:¥0.72 28000+:¥0.66 100000+:¥0.62 200000+:¥0.61 |
 Digi-Key 得捷电子 | PMDT290UCEH | Nexperia USA Inc. | PMDT290UCE/SOT666/SOT6 | $0.09405 |
 element14 Asia-Pacific | PMDT290UCE | NXP Semiconductors | MOSFET N/P CH 20/20V 800/550MASOT666 RoHS : Compliant | 1 : $2.0 10 : $1.7 100 : $1.5 250 : $1.3 500 : $1.13 1,000 : $0.96 4,000 : $0.74 8,000 : $0.64
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 Future(富昌) | PMDT290UCE,115 | NXP Semiconductors | FET - 阵列 - 分立半导体产品 半导体 MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET | 4000+:¥0.8201 8000+:¥0.77 12000+:¥0.72 28000+:¥0.66 100000+:¥0.62 200000+:¥0.611+:¥2.44 10+:¥1.66 100+:¥0.95 1000+:¥0.78 4000+:¥0.74 8000+:¥0.74 24000+:¥0.68 48000+:¥0.66 100000+:¥0.634000+:¥0.55 12000+:¥0.55 |
 Mouser 贸泽电子 | PMDT290UCE,115 | NXP Semiconductors | FET - 阵列 - 分立半导体产品 半导体 MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET | 4000+:¥0.8201 8000+:¥0.77 12000+:¥0.72 28000+:¥0.66 100000+:¥0.62 200000+:¥0.611+:¥2.44 10+:¥1.66 100+:¥0.95 1000+:¥0.78 4000+:¥0.74 8000+:¥0.74 24000+:¥0.68 48000+:¥0.66 100000+:¥0.63 |
 Mouser 贸泽电子 | PMDT290UCE,115 | Nexperia | MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET | 1:¥3.0736 10:¥2.3278 100:¥1.2656 1,000:¥0.95259 4,000:¥0.82264
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 立创商城 | PMDT290UCE,115 | Nexperia(安世) | 连续漏极电流(Id)(25°C 时):800mA, 550mA 漏源电压(Vdss):20V 栅源极阈值电压:950mV @ 250uA 漏源导通电阻:380mΩ @ 500mA,4.5V;850mΩ @ 400mA,4.5V 最大功率耗散(Ta=25°C):500mW 类型:N沟道和P沟道 | 1+:¥1.43 10+:¥1.39 30+:¥1.37 100+:¥1.34
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 立创商城 | PMDT290UCEH | Nexperia(安世) | MOS(场效应管) | 1+:¥1.6691 200+:¥0.646 500+:¥0.6233 1000+:¥0.612
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