SeriesSuperFET® III

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs67mOhm @ 20A, 10V

Vgs(th) (Max) @ Id4V @ 3.9mA

Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds3750 pF @ 400 V

FET Feature-

Power Dissipation (Max)266W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-3

Package / CaseTO-247-3