Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)20 V

Current - Continuous Drain (Id) @ 25°C2.2A (Tj)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs155mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V

Vgs (Max)±12V

Input Capacitance (Ciss) (Max) @ Vds300 pF @ 10 V

FET FeatureSchottky Diode (Isolated)

Power Dissipation (Max)1.1W (Tj)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageChipFET™

Package / Case8-SMD, Flat Lead