Series-

PackageTube

FET TypeN-Channel

TechnologySiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)1700 V

Current - Continuous Drain (Id) @ 25°C5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id-

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)-

Input Capacitance (Ciss) (Max) @ Vds-

FET Feature-

Power Dissipation (Max)-

Operating Temperature175°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageTO-263-7

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)