Series-

PackageTube

FET TypeN-Channel

TechnologySiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)20 V

Current - Continuous Drain (Id) @ 25°C6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)20V

Rds On (Max) @ Id, Vgs1Ohm @ 2A, 20V

Vgs(th) (Max) @ Id4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs13 nC @ 20 V

Vgs (Max)+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds200 pF @ 1000 V

FET Feature-

Power Dissipation (Max)60W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-3L

Package / CaseTO-247-3