SeriesHEXFET®

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)250 V

Current - Continuous Drain (Id) @ 25°C46A

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id-

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)-

Input Capacitance (Ciss) (Max) @ Vds-

FET Feature-

Power Dissipation (Max)-

Operating Temperature-

Mounting TypeSurface Mount

Supplier Device PackageDie

Package / CaseDie