SeriesHEXFET®

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)30 V

Current - Continuous Drain (Id) @ 25°C260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)7V, 10V

Rds On (Max) @ Id, Vgs2.5mOhm @ 76A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs209 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds8250 pF @ 25 V

FET Feature-

Power Dissipation (Max)3.8W (Ta), 300W (Tc)

Operating Temperature-

Mounting TypeSurface Mount

Supplier Device PackageSUPER D2-PAK

Package / CaseSuper D2-Pak