SeriesHEXFET®

PackageTape & Reel (TR)

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)30 V

Current - Continuous Drain (Id) @ 25°C8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)4.5V

Rds On (Max) @ Id, Vgs25mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V

Vgs (Max)±12V

Input Capacitance (Ciss) (Max) @ Vds-

FET Feature-

Power Dissipation (Max)2.5W (Ta)

Operating Temperature-

Mounting TypeSurface Mount

Supplier Device Package8-SO

Package / Case8-SOIC (0.154", 3.90mm Width)