SeriesHEXFET®

PackageTube

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)150 V

Current - Continuous Drain (Id) @ 25°C27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds2210 pF @ 25 V

FET Feature-

Power Dissipation (Max)250W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-220AB

Package / CaseTO-220-3