SeriesHEXFET®

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)150 V

Current - Continuous Drain (Id) @ 25°C2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs240mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds1280 pF @ 25 V

FET Feature-

Power Dissipation (Max)2.5W (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device Package8-SO

Package / Case8-SOIC (0.154", 3.90mm Width)