封装/外壳:--
Packing Type:WAFER SAWN
VDS max:1200.0V
Technology:IGBT HighSpeed 3
Operating Temperature min max:-40.0°C 175.0°C
VCE(sat) max:2.42V
IC max:75.0A
VGE(th) min max:5.3V 6.3V
RoHS compliant:yes
Packing Type:WAFER SAWN
VDS max:1200.0V
Technology:IGBT HighSpeed 3
Operating Temperature min max:-40.0°C 175.0°C
VCE max:1200.0V
VCE(sat) max:2.42V
IC max:75.0A
VGE(th) min max:5.3V 6.3V
RoHS compliant:yes
Packing Type:HORIZONTAL FRAME SHIPPER
VDS max:1200.0V
Technology:IGBT HighSpeed 3
Operating Temperature min max:-40.0°C 175.0°C
VCE max:1200.0V
VCE(sat) max:2.42V
IC max:75.0A
VGE(th) min max:5.3V 6.3V
无铅情况/RoHs:无铅/符合RoHs