SeriesAutomotive, AEC-Q101

PackageBox

FET Type2 N-Channel (Half Bridge)

FET FeatureSilicon Carbide (SiC)

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C640A (Tc)

Rds On (Max) @ Id, Vgs2.97mOhm @ 480A, 15V

Vgs(th) (Max) @ Id3.6V @ 160mA

Gate Charge (Qg) (Max) @ Vgs15V

Input Capacitance (Ciss) (Max) @ Vds800V

Power - Max-

Operating Temperature-40°C ~ 175°C (TJ)

Mounting TypeChassis Mount

Package / CaseModule

Supplier Device PackageModule