型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
BSS209PW | OptiMOS -P Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 75.35 Kbytes | 共8页 |  | BSO4420,BSD223P,BSO4804,BSL207SP,BSO4822,BSL211SP,BSL307SP,BSO201SP,BSS223PW,BSO203P |
BSS209PW | OptiMOS-P Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 284.82 Kbytes | 共8页 |  | 无 |
BSS209PW H6327 | MOSFET P-Ch -20V -630mA SOT-323-3 | Infineon Technologies |  | 250.90 Kbytes | 共9页 |  | 无 |
BSS209PW H6327 | | Infineon(英飞凌) |  | 250.25 Kbytes | 共9页 |  | 无 |
BSS209PW L6327 | MOSFET P-CH 20V 580MA SOT-323 | Infineon Technologies |  | 250.25 Kbytes | 共9页 |  | 无 |
BSS209PW_06 | OptiMOS-P Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 284.82 Kbytes | 共8页 |  | 无 |
BSS209PWH6327 | 连续漏极电流(Id)(25°C 时):630mA(Tc) 漏源电压(Vdss):-20V 栅源极阈值电压:1.2V @ 3.5uA 漏源导通电阻:550mΩ @ 630mA,4.5V 最大功率耗散(Ta=25°C):300mW 类型:P沟道 | Infineon(英飞凌) |  | 250.25 Kbytes | 共9页 |  | 无 |
BSS209PWH6327XTSA1 | MOSFET P-Ch -20V -630mA SOT-323-3 | Infineon Technologies |  | 250.90 Kbytes | 共9页 |  | 无 |
BSS209PWH6327XTSA1 | MOSFET P-CH 20V 0.63A SOT-323 | Infineon Technologies |  | 250.25 Kbytes | 共9页 |  | 无 |
BSS209PWH6327XTSA1 | 连续漏极电流(Id)(25°C 时):630mA(Tc) 漏源电压(Vdss):-20V 栅源极阈值电压:1.2V @ 3.5uA 漏源导通电阻:550mΩ @ 630mA, 4.5V 最大功率耗散(Ta=25°C):300mW 类型:P沟道 | Infineon(英飞凌) |  | 250.25 Kbytes | 共9页 |  | 无 |