型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
BSS169 | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) | SIEMENS[Siemens Semiconductor Group] | ![SIEMENS[Siemens Semiconductor Group]的LOGO](/PdfSupLogo/144SIEMENS.GIF) | 33.36 Kbytes | 共4页 |  | BSP129,BSP135,BSP149,BSS135,BSS139,BSS149,BSS159,BSS229,BSS129,BSP299 |
BSS169 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 222.19 Kbytes | 共9页 |  | BSP135,BSS7728N,BSO-302SN,BSP149,SN7002N,BSP170P,SN7002W,BSP171P,BSP613P,BSS83P |
BSS169 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 264.58 Kbytes | 共9页 |  | 无 |
BSS169 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 498.19 Kbytes | 共9页 |  | 无 |
BSS169 | SIPMOS Small-Signal-Transistor | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO](/PdfSupLogo/975TYSEMI.GIF) | 438.01 Kbytes | 共3页 |  | 无 |
BSS169 | N-Channel 100 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1916.49 Kbytes | 共9页 |  | 无 |
BSS169 E6327 | MOSFET N-CH 100V 170MA SOT23-3 | Infineon Technologies |  | 368.79 Kbytes | 共3页 |  | 无 |
BSS169 E6906 | MOSFET N-CH 100V 170MA SOT23-3 | Infineon Technologies |  | 368.79 Kbytes | 共3页 |  | 无 |
BSS169 H6327 | MOSFET N-Ch 100V 90mA SOT-23-3 | Infineon Technologies |  | 396.46 Kbytes | 共9页 |  | 无 |
BSS169 H6327 | | Infineon(英飞凌) |  | 412.42 Kbytes | 共9页 |  | 无 |
BSS169 H6906 | MOSFET N-Ch 100V 90mA SOT-23-3 | Infineon Technologies |  | 396.54 Kbytes | 共9页 |  | 无 |
BSS169_07 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 264.58 Kbytes | 共9页 |  | 无 |
BSS169H6327 | 连续漏极电流(Id)(25°C 时):170mA 漏源电压(Vdss):100V 栅源极阈值电压:1.8V @ 50uA 漏源导通电阻:6Ω @ 170mA,10V 最大功率耗散(Ta=25°C):360mW 类型:N沟道 | Infineon(英飞凌) |  | 492.59 Kbytes | 共9页 |  | 无 |
BSS169-H6327 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 498.19 Kbytes | 共9页 |  | 无 |
BSS169H6327XT | MOSFET N-Ch 100V 90mA SOT-23-3 | Infineon Technologies |  | 396.57 Kbytes | 共9页 |  | 无 |
BSS169H6327XTSA1 | MOSFET N-Ch 100V 90mA SOT-23-3 | Infineon Technologies |  | 396.46 Kbytes | 共9页 |  | 无 |
BSS169H6327XTSA1 | MOSFET N-CH 100V 170MA SOT23 | Infineon Technologies |  | 412.42 Kbytes | 共9页 |  | 无 |
BSS169H6327XTSA1 | | Infineon(英飞凌) |  | 412.42 Kbytes | 共9页 |  | 无 |
BSS169H6906XTSA1 | MOSFET SMALL SIGNAL N-CH | Infineon Technologies |  | 396.46 Kbytes | 共9页 |  | 无 |
BSS169H6906XTSA1 | MOSFET N-CH 100V 170MA SOT23 | Infineon Technologies |  | 412.42 Kbytes | 共9页 |  | 无 |
BSS169H6906XTSA1 | MOSFET N-CH 100V 170MA SOT23-3 | Infineon Technologies |  | 412.42 Kbytes | 共9页 |  | 无 |
BSS169I | Small-Signal Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 1533.93 Kbytes | 共10页 |  | 无 |
BSS169L6327HTSA1 | MOSFET N-CH 100V 170MA SOT23-3 | Infineon Technologies |  | 207.62 Kbytes | 共9页 |  | 无 |
BSS169L6906HTSA1 | MOSFET N-CH 100V 170MA SOT23-3 | Infineon Technologies |  | 207.62 Kbytes | 共9页 |  | 无 |
BSS169N | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 221.94 Kbytes | 共9页 |  | BSP135,BSS7728N,BSO-302SN,BSP149,SN7002N,BSP170P,SN7002W,BSP171P,BSP613P,BSS83P |