型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
BSP373 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | SIEMENS[Siemens Semiconductor Group] | ![SIEMENS[Siemens Semiconductor Group]的LOGO](/PdfSupLogo/144SIEMENS.GIF) | 168.35 Kbytes | 共9页 |  | BSP17,BSP170,BSP171,BSP298,BSP299,BSP300,BSP319,BSP320S,BSP372,BUZ171 |
BSP373 | SIPMOS Small-Signal Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 278.75 Kbytes | 共8页 |  | BSP298,BSS101,BSS229,BS107,BSP299,BSS110,BSS284,BSP372,BS170 |
BSP373 | SIPMOS Small-Signal Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 3596.53 Kbytes | 共8页 |  | 无 |
BSP373 E6327 | MOSFET N-CH 100V 1.7A SOT223-4 | Infineon Technologies |  | 357.28 Kbytes | 共9页 |  | 无 |
BSP373_07 | SIPMOS Small-Signal Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 3596.53 Kbytes | 共8页 |  | 无 |
BSP373L6327HTSA1 | MOSFET N-CH 100V 1.7A SOT-223 | Infineon Technologies |  | 357.28 Kbytes | 共9页 |  | 无 |
BSP373L6327HTSA1 | MOSFET N-CH 100V 1.7A SOT223-4 | Infineon Technologies |  | 357.28 Kbytes | 共9页 |  | 无 |
BSP373N | OptiMOS⢠Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 569.15 Kbytes | 共9页 |  | 无 |
BSP373N H6327 | 连续漏极电流(Id)(25°C 时):1.8A 漏源电压(Vdss):100V 栅源极阈值电压:4V @ 218uA 漏源导通电阻:240mΩ @ 1.8A,10V 最大功率耗散(Ta=25°C):1.8W 类型:N沟道 | Infineon(英飞凌) |  | 563.44 Kbytes | 共9页 |  | 无 |
BSP373NH6327 | N沟道,100V,1.8A,240mΩ@10V | Infineon(英飞凌) |  | 563.44 Kbytes | 共9页 |  | 无 |
BSP373NH6327XTSA1 | MOSFET N-Ch 100V 1.8A SOT-223-3 | Infineon Technologies |  | 544.1 Kbytes | 共9页 |  | 无 |
BSP373NH6327XTSA1 | MOSFET N-CH 100V 1.7A SOT-223 | Infineon Technologies |  | 544.1 Kbytes | 共9页 |  | 无 |
BSP373NH6327XTSA1 | 连续漏极电流(Id)(25°C 时):1.8A 漏源电压(Vdss):100V 栅源极阈值电压:4V @ 218uA 漏源导通电阻:240mΩ @ 1.8A,10V 最大功率耗散(Ta=25°C):1.8W 类型:N沟道 | Infineon(英飞凌) |  | 563.44 Kbytes | 共9页 |  | 无 |