型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
BSP324 | SIPMOS Small-Signal Transistor (N channel Enhancement mode) | SIEMENS[Siemens Semiconductor Group] | ![SIEMENS[Siemens Semiconductor Group]的LOGO](/PdfSupLogo/144SIEMENS.GIF) | 176.55 Kbytes | 共9页 |  | BSP299,BSS119,BSS295,BSP300,BSS123,BSS296,BSP315,BSS124,BSS297,BSP123 |
BSP324 | SIPMOS Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 108.2 Kbytes | 共8页 |  | SPD11N10,SPD30P06P,BSP125,SPD35N10,SPB10N10L,SPP10N10L,SPD18P06P,SPI10N10,SPI21N10,SPI35N10 |
BSP324 | SIPMOS Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 544.94 Kbytes | 共8页 |  | 无 |
BSP324 E6327 | MOSFET N-CH 400V 170MA SOT223-4 | Infineon Technologies |  | 539.33 Kbytes | 共8页 |  | 无 |
BSP324 H6327 | 连续漏极电流(Id)(25°C 时):170mA 漏源电压(Vdss):400V 栅源极阈值电压:2.3V @ 94uA 漏源导通电阻:25Ω @ 170mA,10V 最大功率耗散(Ta=25°C):1.8W 类型:N沟道 | Infineon(英飞凌) |  | 489.76 Kbytes | 共8页 |  | 无 |
BSP324_09 | SIPMOS Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 544.94 Kbytes | 共8页 |  | 无 |
BSP324H6327XTSA1 | MOSFET N-Ch 400V 170mA SOT-223-3 | Infineon Technologies |  | 434.80 Kbytes | 共8页 |  | 无 |
BSP324H6327XTSA1 | MOSFET N-CH 400V 170MA SOT-223 | Infineon Technologies |  | 489.76 Kbytes | 共8页 |  | 无 |
BSP324L6327 | SIPMOSï Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 544.94 Kbytes | 共8页 |  | 无 |
BSP324L6327HTSA1 | MOSFET N-CH 400V 170MA SOT223-4 | Infineon Technologies |  | 539.33 Kbytes | 共8页 |  | 无 |