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FET Type2 N-Channel

FET FeatureSilicon Carbide (SiC)

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C134A (Tc)

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id4V @ 22mA

Gate Charge (Qg) (Max) @ Vgs-

Input Capacitance (Ciss) (Max) @ Vds14000pF @ 10V

Power - Max935W (Tc)

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeChassis Mount

Package / CaseModule

Supplier Device PackageModule