| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Arrow(艾睿) | BSC019N04NS G | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥5.75
10000+:￥5.54
25000+:￥5.45
50000+:￥5.321+:￥10.93
10+:￥8.78
100+:￥7.02
500+:￥7.02
1000+:￥6.53
2500+:￥5.99
5000+:￥5.93
10000+:￥5.71
25000+:￥5.670110+:￥ |
Avnet Express | BSC019N04NSG | Infineon Technologies Americas Inc. | SP000388299 SINGLE N POWER 40V MOS | 5,000 : $0.0016
|
ChipOneStop | BSC019N04NS G | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥5.75
10000+:￥5.54
25000+:￥5.45
50000+:￥5.321+:￥10.93
10+:￥8.78
100+:￥7.02
500+:￥7.02
1000+:￥6.53
2500+:￥5.99
5000+:￥5.93
10000+:￥5.71
25000+:￥5.670110+:￥5.02 |
Digi-Key 得捷电子 | BSC019N04NS G | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥5.75
10000+:￥5.54
25000+:￥5.45
50000+:￥5.32 |
Digi-Key 得捷电子 | BSC019N04NSG | Infineon Technologies | BSC019N04 - 12V-300V N-CHANNEL P | $0.54413 |
Digi-Key 得捷电子 | BSC019N04NSGATMA1 | Infineon Technologies | BSC019N04NS - N-CHANNEL POWER MO | $0.54000 |
Mouser 贸泽电子 | BSC019N04NS G | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 1:¥10.6785
10:¥9.1417
100:¥7.0286
500:¥6.2037
1,000:¥4.9042
5,000:¥4.9042
|
Mouser 贸泽电子 | BSC019N04NS G | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥5.75
10000+:￥5.54
25000+:￥5.45
50000+:￥5.321+:￥10.93
10+:￥8.78
100+:￥7.02
500+:￥7.02
1000+:￥6.53
2500+:￥5.99
5000+:￥5.93
10000+:￥5.71
25000+:￥5.6701 |
Rochester Electronics | BSC019N04NSG | Infineon Technologies AG | N/A | 500 : $1.0
1,000 : $0.95
|
Wuhan P&S | BSC019N04NSG | Infineon Technologies AG | 40V,100A,N Channel Power MOSFET | 1 : $2.15
100 : $1.68
1,000 : $1.38
|
立创商城 | BSC019N04NS | VBsemi(台湾微碧) | MOS(场效应管) | 1+:￥4.98
10+:￥3.67
30+:￥3.43
100+:￥3.19
500+:￥3.09
1000+:￥3.03
|
立创商城 | BSC019N04NS G | Infineon(英飞凌) | 连续漏极电流（Id）（25°C 时）：100A(Tc) 漏源电压（Vdss）：40V 栅源极阈值电压：4V @ 85uA 漏源导通电阻：1.9mΩ @ 50A,10V 最大功率耗散（Ta=25°C）：125W(Tc) 类型：N沟道 | 1+:￥9.44
200+:￥3.66
500+:￥3.53
1000+:￥3.46
|