SeriesPOWER MOS V®

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)400 V

Current - Continuous Drain (Id) @ 25°C53A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs70mOhm @ 26.5A, 10V

Vgs(th) (Max) @ Id4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs495 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds8890 pF @ 25 V

FET Feature-

Power Dissipation (Max)450W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeChassis Mount

Supplier Device PackageSOT-227 (ISOTOP®)

Package / CaseSOT-227-4, miniBLOC