型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
2SK2158 | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | NEC[NEC] | ![NEC[NEC]的LOGO](/PdfSupLogo/107NEC.GIF) | 60.48 Kbytes | 共6页 |  | 2SK2109,2SK2110,2SK2111,2SK2112,2SK2157,2SK2159,2SK2053,2SK2054,2SK2055,2SK2070 |
2SK2158 | MOS Field Effect Transistor | KEXIN[Guangdong Kexin Industrial Co.,Ltd] | ![KEXIN[Guangdong Kexin Industrial Co.,Ltd]的LOGO](/PdfSupLogo/568KEXIN.GIF) | 45.93 Kbytes | 共1页 |  | TK15H50C,UPA2451C,KHB3D0N90P1,TPCF8001,TPCP8003-H,SSM3J16FS,SSM6K30FE,NP82N055CHE_07,2SK3794,2SK2159 |
2SK2158 | Capable of drive gate with 1.5 V Because of high input impedance, there is no need | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO](/PdfSupLogo/975TYSEMI.GIF) | 103.61 Kbytes | 共1页 |  | 无 |
2SK2158 | DC/DC CONVERTERS | SKTECHNOLGY[SHIKE Electronics] | ![SKTECHNOLGY[SHIKE Electronics]的LOGO](/PdfSupLogo/1005SKTECHNOLGY.GIF) | 1526.59 Kbytes | 共3页 |  | 无 |
2SK2158 | super highdense cell design for extremely low RDS | SKTECHNOLGY[SHIKUES Electronics] | ![SKTECHNOLGY[SHIKUES Electronics]的LOGO](/PdfSupLogo/1005SKTECHNOLGY.GIF) | 1785.09 Kbytes | 共3页 |  | 无 |
2SK2158-T1B | 连续漏极电流(Id)(25°C 时):250mA 漏源电压(Vdss):60V 栅源极阈值电压:2.5V @ 250uA 漏源导通电阻:3.3Ω @ 200mA,10V 最大功率耗散(Ta=25°C):300mW 类型:N沟道 | VBsemi(台湾微碧) |  | 1.24 Mbytes | 共8页 |  | 无 |
2SK2158-T1B-A | N-Channel 60-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1003.98 Kbytes | 共8页 |  | 无 |