Series-

PackageTube

FET TypeN-Channel

TechnologySiCFET (Cascode SiCJFET)

Drain to Source Voltage (Vdss)750 V

Current - Continuous Drain (Id) @ 25°C81A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs23mOhm @ 20A, 12V

Vgs(th) (Max) @ Id6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs37.8 nC @ 15 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds1422 pF @ 100 V

FET Feature-

Power Dissipation (Max)385W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4

Package / CaseTO-247-4