Series-

PackageTray

FET TypeN-Channel

TechnologyGaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)600 V

Current - Continuous Drain (Id) @ 25°C17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)8V

Rds On (Max) @ Id, Vgs180mOhm @ 11A, 8V

Vgs(th) (Max) @ Id2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V

Vgs (Max)±18V

Input Capacitance (Ciss) (Max) @ Vds760 pF @ 480 V

FET Feature-

Power Dissipation (Max)96W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeSurface Mount

Supplier Device Package3-PQFN (8x8)

Package / Case3-PowerDFN