Current - Continuous Drain (Id) @ 25° C:4A
Drain to Source Voltage (Vdss):20V
FET Feature:Logic Level Gate
FET Type:MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs:22.3nC @ 4V
Input Capacitance (Ciss) @ Vds:1484pF @ 10V
Mounting Type:Surface Mount
Package / Case:UFM
Power - Max:500mW
Rds On (Max) @ Id, Vgs:38 mOhm @ 3A, 4V
Supplier Device Package:UFM (2.0x2.1)
Vgs(th) (Max) @ Id:1V @ 1mA
包装:3UFM
渠道类型:P
通道模式:Enhancement
最大漏源电压:20 V
最大连续漏极电流:4 A
RDS -于:38@4V mOhm
最大门源电压:±8 V
工作温度:-55 to 150 °C
安装:Surface Mount
标准包装:Tape & Reel
工厂包装数量:3000
产品种类:MOSFET
晶体管极性:P-Channel
连续漏极电流:- 4 A
正向跨导 - 闵:12.1 S / 6.1 S
安装风格:SMD/SMT
RDS(ON):60 mOhms
封装:Reel
功率耗散:800 mW
封装/外壳:UFM
配置:Single
漏源击穿电压:- 20 V
RoHS:RoHS Compliant