SeriesAutomotive, AEC-Q101, E

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs52mOhm @ 32A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs344 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds7379 pF @ 100 V

FET Feature-

Power Dissipation (Max)625W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247AD

Package / CaseTO-247-3