SeriesAutomotive, AEC-Q101, E

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs73mOhm @ 22A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs266 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds5858 pF @ 100 V

FET Feature-

Power Dissipation (Max)500W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247AD

Package / CaseTO-247-3