Channel TypeN
Collector Current400 A
Collector to Emitter Shorted Voltage1200 V
Collector to Emitter Voltage1200 V
ConfigurationSingle
Continuous Collector Current400 A
Dimensions106.4 x 61.4 x 30.5 mm
Energy Rating35 mJ
Gate Capacitance22 nF
Gate to Emitter Voltage±20 V
Height1.201" (30.5mm)
Input Capacitance22 nF (Typ.)
Length4.188" (106.4mm)
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-40 °C
Mounting TypeScrew
Number of Pins7
Package TypeD 56
PolarityN-Channel
Primary TypeSi
Product HeaderUltrafast N-Channel IGBT Module
Resistance, Thermal, Junction to Case0.05 K/W
SeriesIGBT Series
Temperature Operating Range-40 to +150 °C
Transistor TypeIGBT
Turn Off Time500 ns
Turn On Time70 ns
TypeUltrafast
Width2.417" (61.4mm)