Channel TypeN

Collector Current565 A

Collector to Emitter Shorted Voltage1200 V

Collector to Emitter Voltage1200 V

ConfigurationSingle

Continuous Collector Current616 A

Dimensions106.4 x 61.4 x 36.5 mm

Energy Rating64 mJ

Fall Time75 ns

Gate Capacitance26 nF

Gate to Emitter Voltage20 V

Height1.437" (36.5mm)

Length4.188" (106.4mm)

Maximum Operating Temperature+175 °C

Minimum Operating Temperature-40 °C

Mounting TypeScrew

Number of Pins4

Operating and Storage Temperature-40 to 150°C (Operating), -40 to 125°C (Storage)

Package TypeSemitrans4

PolarityN-Channel

Primary TypeSi

Product HeaderSPT N-Channel IGBT Module

Resistance, Thermal, Junction to Case0.055 K/W

Rise Time70

SeriesIGBT Series

Switching Speed12 kHz

Temperature Operating Range-40 to +175 °C

Transistor TypeIGBT

TypeSPT

Voltage, Breakdown, Collector to Emitter1200 V

Voltage, Saturation, Collector to Emitter1200 V

Width2.417" (61.4mm)