Channel TypeN, P

ConfigurationSingle

Dimensions1.7 x 1.2 x 0.6 mm

Drain Current-135, 305 mA

Drain to Source On Resistance3, 8 Ω

Drain to Source Voltage-60, 60 V

Forward Transconductance100, 200 mS

Forward Voltage, Diode1.4/-1.4 V

Gate to Source Voltage±20 V

Height0.024" (0.6mm)

Input Capacitance23 pF@ -25 V, 30 pF @ 25 V

Length0.066" (1.68mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip2

Number of Pins6

Operating Temperature-55 to 150 °C

Package TypeSC-89

PolarizationN-Channel and P-Channel

Power Dissipation250 mW

SeriesSI10 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge750/1700 nC

Turn Off Delay Time20, 35 ns

Turn On Delay Time15, 20 ns

Typical Gate Charge @ Vgs1700 nC @ 4.5 V, 750 nC @ 4.5 V

Voltage, Breakdown, Drain to Source60/-60 V

Width0.047" (1.2mm)