SE9926
/连续漏极电流(Id)(25°C 时):6A 漏源电压(Vdss):-20V 栅源极阈值电压:1.2V @ 250uA 漏源导通电阻:27.5mΩ @ 4.5A,4.5V 最大功率耗散(Ta=25°C):1.5W 类型:双N沟道
SE9926的规格信息
商品类型MOS(场效应管)
漏源电压(Vdss)-20V
连续漏极电流(Id)(25°C 时)6A
栅源极阈值电压1.2V @ 250uA
漏源导通电阻27.5mΩ @ 4.5A,4.5V
最大功率耗散(Ta=25°C)1.5W
类型双N沟道
SE9926
SE9926及相关型号的PDF资料
型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
SE9926 | Thyristor Surge Suppressors | LEIDITECH[Shanghai Leiditech Electronic Technology Co., Ltd] | ![LEIDITECH[Shanghai Leiditech Electronic Technology Co., Ltd]的LOGO](/PdfSupLogo/1029LEIDITECH.GIF) | 567.04 Kbytes | 共9页 |  | 无 |
SE9926的全球分销商及价格
销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 立创商城 | SE9926 | SINO-IC(光宇睿芯) | 连续漏极电流(Id)(25°C 时):6A 漏源电压(Vdss):-20V 栅源极阈值电压:1.2V @ 250uA 漏源导通电阻:27.5mΩ @ 4.5A,4.5V 最大功率耗散(Ta=25°C):1.5W 类型:双N沟道 | 10+:¥0.362595 100+:¥0.272631 300+:¥0.256107 1000+:¥0.239583 5000+:¥0.232239 10000+:¥0.228611
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