Series-

PackageTube

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)100 V

Current - Continuous Drain (Id) @ 25°C35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs50mOhm @ 10A, 10V

Vgs(th) (Max) @ Id2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds6516 pF @ 25 V

FET Feature-

Power Dissipation (Max)104W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-220-3

Package / CaseTO-220-3