Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)200 V

Current - Continuous Drain (Id) @ 25°C132A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs11mOhm @ 20A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds4970 pF @ 100 V

FET Feature-

Power Dissipation (Max)429W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-220-3

Package / CaseTO-220-3