Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs140mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id5V @ 960µA

Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds2350 pF @ 25 V

FET Feature-

Power Dissipation (Max)307W (Tc)

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-220AB

Package / CaseTO-220-3