Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs205mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id4V @ 630µA

Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds1.4 nF @ 25 V

FET Feature-

Power Dissipation (Max)68W (Tc)

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-3

Package / CaseTO-3P-3 Full Pack