Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)600 V

Current - Continuous Drain (Id) @ 25°C35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs102mOhm @ 18.1A, 10V

Vgs(th) (Max) @ Id5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V

FET Feature-

Power Dissipation (Max)379W (Tc)

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247

Package / CaseTO-247-3