SeriesSuperFET® III

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V

Vgs(th) (Max) @ Id4V @ 2.8mA

Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds2833 pF @ 400 V

FET Feature-

Power Dissipation (Max)208W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4

Package / CaseTO-247-4