Maximum Transition Frequency:2000(Typ) MHz

Minimum DC Current Gain:20@50mA@10 V

Maximum Collector Base Voltage:35 V

Maximum Power Dissipation:2500 mW

Mounting:Through Hole

Maximum Collector Emitter Saturation Voltage:0.5@5mA@50mA V

Maximum Collector Emitter Voltage:20 V

Material:Si

Maximum Collector Emitter Voltage Range:20 to 30 V

Pin_Count:3

Maximum Emitter Base Voltage:4 V

Operating Temperature:-65 to 200 °C

Minimum DC Current Gain Range:2 to 30

Output Power:0.75 W

Number of Elements per Chip:1

Maximum DC Collector Current:0.15 A

Maximum DC Collector Current Range:0.12 to 0.5 A

Configuration:Single

Type:NPN

Dimension:6.6(Max) x 9.39(Max) mm