Series-

PackageBag

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)25 V

Current - Continuous Drain (Id) @ 25°C10A

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs600Ohm @ 0A, 10V

Vgs(th) (Max) @ Id5V @ 10A

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds5 pF @ 10 V

FET FeatureStandard

Power Dissipation (Max)800mW (Tc)

Operating Temperature175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-72

Package / CaseTO-72-3