Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)40 V

Current - Continuous Drain (Id) @ 25°C90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs2.95mOhm @ 45A, 10V

Vgs(th) (Max) @ Id2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds5850 pF @ 25 V

FET Feature-

Power Dissipation (Max)1.8W (Ta), 147W (Tc)

Operating Temperature175°C

Mounting TypeSurface Mount

Supplier Device PackageTO-263-3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB