Series-

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)60 V

Current - Continuous Drain (Id) @ 25°C45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs11.6mOhm @ 23A, 10V

Vgs(th) (Max) @ Id2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V

FET Feature-

Power Dissipation (Max)1.2W (Ta), 75W (Tc)

Operating Temperature175°C

Mounting TypeSurface Mount

Supplier Device PackageTO-252 (MP-3ZP)

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63