Series-

PackageTube

FET TypeN-Channel

TechnologySiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)1200 V

Current - Continuous Drain (Id) @ 25°C103A (Tc)

Drive Voltage (Max Rds On, Min Rds On)20V

Rds On (Max) @ Id, Vgs31mOhm @ 40A, 20V

Vgs(th) (Max) @ Id2.8V @ 3mA

Gate Charge (Qg) (Max) @ Vgs232 nC @ 20 V

Vgs (Max)+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 1000 V

FET Feature-

Power Dissipation (Max)500W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4

Package / CaseTO-247-4