Series-

PackageTube

FET TypeN-Channel

TechnologySiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)700 V

Current - Continuous Drain (Id) @ 25°C140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)20V

Rds On (Max) @ Id, Vgs19mOhm @ 40A, 20V

Vgs(th) (Max) @ Id2.4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs215 nC @ 20 V

Vgs (Max)+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 700 V

FET Feature-

Power Dissipation (Max)455W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4

Package / CaseTO-247-4