Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)60 V

Current - Continuous Drain (Id) @ 25°C12A

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id-

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)±320V

Input Capacitance (Ciss) (Max) @ Vds-

FET Feature-

Power Dissipation (Max)75W

Operating Temperature-55°C ~ 150°C

Mounting TypeThrough Hole

Supplier Device PackageTO-220AB

Package / CaseTO-220-3