| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Digi-Key 得捷电子 | IPT65R033G7XTMA1 | Infineon Technologies | MOSFET N-CH 650V 69A 8HSOF | $17.10000 |
Digi-Key 得捷电子 | IPT65R105G7XTMA1 | Infineon Technologies | MOSFET N-CH 650V 24A 8HSOF | Not For New Designs |
Digi-Key 得捷电子 | IPT65R105G7XTMA1 | Infineon Technologies | MOSFET N-CH 650V 24A HSOF-8-2 | $2.83000 |
Digi-Key 得捷电子 | IPT65R195G7XTMA1 | Infineon Technologies | MOSFET N-CH 650V 14A 8HSOF | $3.43000 |
Mouser 贸泽电子 | IPT65 | Hammond Manufacturing | 机架和机柜配件 Vented Pagoda 600 x 500 | 价格未公开 |
Mouser 贸泽电子 | IPT65R033G7XTMA1 | Infineon Technologies | MOSFET | 1:¥118.4918
10:¥108.9546
25:¥104.4233
100:¥91.982
2,000:¥67.7774
|
Mouser 贸泽电子 | IPT65R105G7XTMA1 | Infineon Technologies | MOSFET | 1:¥44.7932
10:¥38.1149
100:¥33.0412
250:¥31.3462
2,000:¥22.5096
4,000:查看
|
Mouser 贸泽电子 | IPT65R195G7XTMA1 | Infineon Technologies | MOSFET | 1:¥23.7413
10:¥20.1366
100:¥17.4472
250:¥16.5997
2,000:¥11.9102
4,000:查看
|
立创商城 | IPT65R033G7 | Infineon(英飞凌) | 连续漏极电流（Id）（25°C 时）：69A(Tc) 漏源电压（Vdss）：650V 栅源极阈值电压：4V @ 1.44mA 漏源导通电阻：33mΩ @ 28.9A,10V 最大功率耗散（Ta=25°C）：391W(Tc) 类型：N沟道 | 1+:￥177.77
200+:￥68.8
500+:￥66.38
1000+:￥65.19
|
立创商城 | IPT65R105G7 | Infineon(英飞凌) | MOS(场效应管) | 1+:￥53.34
200+:￥20.64
500+:￥19.92
1000+:￥19.56
|
立创商城 | IPT65R195G7 | Infineon(英飞凌) | MOS(场效应管) | 1+:￥28.25
200+:￥10.93
500+:￥10.55
1000+:￥10.36
|