SeriesOptiMOS®-P2

PackageTube

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)40 V

Current - Continuous Drain (Id) @ 25°C120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id2.2V @ 340µA

Gate Charge (Qg) (Max) @ Vgs234 nC @ 10 V

Vgs (Max)+5V, -16V

Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 25 V

FET Feature-

Power Dissipation (Max)136W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackagePG-TO220-3-1

Package / CaseTO-220-3