SeriesStrongIRFET™ 2

Package-

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)100 V

Current - Continuous Drain (Id) @ 25°C15A (Ta), 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)6V, 10V

Rds On (Max) @ Id, Vgs8.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id3.8V @ 46µA

Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 50 V

FET Feature-

Power Dissipation (Max)3.8W (Ta), 100W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackagePG-TO220-3

Package / CaseTO-220-3