型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
IPD60R180P7 | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO](/PdfSupLogo/572ISC.GIF) | 336.06 Kbytes | 共2页 |  | 无 |
IPD60R180P7 | 600V CoolMOSª P7 Power Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 1213.72 Kbytes | 共14页 |  | 无 |
IPD60R180P7 | isc N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO](/PdfSupLogo/572ISC.GIF) | 328.32 Kbytes | 共2页 |  | 无 |
IPD60R180P7_V01 | isc N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO](/PdfSupLogo/572ISC.GIF) | 328.32 Kbytes | 共2页 |  | 无 |
IPD60R180P7ATMA1 | MOSFET | Infineon Technologies |  | 1.12 Mbytes | 共14页 |  | 无 |
IPD60R180P7ATMA1 | MOSFET N-CH 650V 18A TO252-3 | Infineon Technologies |  | 1.12 Mbytes | 共14页 |  | 无 |
IPD60R180P7ATMA1 | 连续漏极电流(Id)(25°C 时):18A(Tc) 漏源电压(Vdss):600V 栅源极阈值电压:4V @ 280uA 漏源导通电阻:180mΩ @ 5.6A,10V 最大功率耗散(Ta=25°C):72W(Tc) 类型:N沟道 | Infineon(英飞凌) |  | 1.78 Mbytes | 共14页 |  | 无 |
IPD60R180P7S | 600V CoolMOSª P7 Power Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 1095.26 Kbytes | 共14页 |  | 无 |
IPD60R180P7S | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO](/PdfSupLogo/572ISC.GIF) | 336.07 Kbytes | 共2页 |  | 无 |
IPD60R180P7SAUMA1 | MOSFET CONSUMER | Infineon Technologies |  | 920.30 Kbytes | 共14页 |  | 无 |
IPD60R180P7SAUMA1 | MOSFET N-CH 600V 18A TO252-3 | Infineon Technologies |  | 1017.77 Kbytes | 共14页 |  | 无 |