SeriesG3R™

PackageTube

FET Type-

TechnologySiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)750 V

Current - Continuous Drain (Id) @ 25°C-

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id-

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)-

Input Capacitance (Ciss) (Max) @ Vds-

FET Feature-

Power Dissipation (Max)-

Operating Temperature-

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4

Package / CaseTO-247-4